• DocumentCode
    3619538
  • Title

    Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

  • Author

    M.R. van den Berg;L.K. Nanver;C.R. de Boer;C.C.G. Visser;J.W. Slotboom

  • Author_Institution
    Delft University of Technology, The Netherlands
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    612
  • Lastpage
    615
  • Keywords
    "Bipolar transistors","Tunneling","Current measurement","MOS capacitors","Charge carrier processes","Temperature dependence","Charge carriers","Anodes","Electric breakdown","MOS devices"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194852
  • Filename
    1503782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619538