DocumentCode
3619540
Title
Numerical Simulation and Comparison of Vertical and Lateral SiGe HBT´s for RF/Microwave Applications
Author
J.S. Hamel;Y.T. Tang
Author_Institution
University of Southampton, UK
fYear
2000
fDate
6/22/1905 12:00:00 AM
Firstpage
620
Lastpage
623
Keywords
"Numerical simulation","Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Radio frequency","Microwave technology","Application software","Lithography","Integrated circuit technology","Silicon on insulator technology"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194854
Filename
1503784
Link To Document