DocumentCode :
3619541
Title :
Capacitance Modelling of LDMOS Transistors
Author :
E.C. Griffith;S.C. Kelly;J.A. Power;D. Bain;S. Whiston;P. Elbert;M. O´Neill
Author_Institution :
Analog Devices, Limerick, Ireland
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
624
Lastpage :
627
Keywords :
"Capacitance","MOSFETs","Voltage","Semiconductor device modeling","CMOS technology","Capacitance-voltage characteristics","Integrated circuit technology","Predictive models","Shape","SPICE"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194855
Filename :
1503785
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619541
