DocumentCode :
3619543
Title :
Identification of Critical Parameters for Plasma Process-Induced Damage in 130 and 100 nm CMOS Technologies
Author :
G. Van den Bosch;B. De Jaeger;Z. Tokei;G. Groeseneken
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
271
Lastpage :
274
Keywords :
"CMOS technology","CMOS process","Leakage current","Gate leakage","Copper","Dielectrics","Plasma confinement","Plasma temperature","Temperature sensors","Aluminum"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194922
Filename :
1503852
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619543
