• DocumentCode
    3619549
  • Title

    Experimental Study of Depletion Mode Si/SiGe MOSFETs for Low-temperature Operation

  • Author

    K. Fobelets;R. Ferguson;V. Gaspari;E. Velazquez;K. Michelakis;S. Despotopoulos;J. Zhang;C. Papavassiliou

  • Author_Institution
    Imperial College of Science, London, United Kingdom
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    555
  • Lastpage
    558
  • Keywords
    "Silicon germanium","Germanium silicon alloys","MOSFETs","MODFETs","HEMTs","Leakage current","Temperature distribution","Temperature sensors","Doping","Epitaxial layers"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194991
  • Filename
    1503921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619549