DocumentCode :
3619549
Title :
Experimental Study of Depletion Mode Si/SiGe MOSFETs for Low-temperature Operation
Author :
K. Fobelets;R. Ferguson;V. Gaspari;E. Velazquez;K. Michelakis;S. Despotopoulos;J. Zhang;C. Papavassiliou
Author_Institution :
Imperial College of Science, London, United Kingdom
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
555
Lastpage :
558
Keywords :
"Silicon germanium","Germanium silicon alloys","MOSFETs","MODFETs","HEMTs","Leakage current","Temperature distribution","Temperature sensors","Doping","Epitaxial layers"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194991
Filename :
1503921
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619549
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