مرکز منطقه ای اطلاع رساني علوم و فناوري - Degradation Dynamics for Deep Scaled p-MOSFET´s during Hot-Carrier Stress

DocumentCode :

3619550

Title :

Degradation Dynamics for Deep Scaled p-MOSFET´s during Hot-Carrier Stress

Author :

C.M. Compagnoni;A. Pirovano;A.L. Lacaita

Author_Institution :

DEI, Politecnico di Milano, Italy

fYear :

2002

fDate :

6/24/1905 12:00:00 AM

Firstpage :

559

Lastpage :

562

Keywords :

"Degradation","MOSFET circuits","Hot carriers","Stress","Annealing","Acceleration","Deuterium","Low voltage","Protocols","Interface states"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN :

88-900847-8-2

Type :

conf

DOI :

10.1109/ESSDERC.2002.194992

Filename :

1503922

Link To Document :