Degradation Dynamics for Deep Scaled p-MOSFET´s during Hot-Carrier Stress

Author

C.M. Compagnoni;A. Pirovano;A.L. Lacaita

Author_Institution

DEI, Politecnico di Milano, Italy

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

559

Lastpage

562

Keywords

"Degradation","MOSFET circuits","Hot carriers","Stress","Annealing","Acceleration","Deuterium","Low voltage","Protocols","Interface states"

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194992

Filename

1503922

Link To Document