DocumentCode :
3619553
Title :
Highly Extendible Memory Cell Architecture for Reliable Data Retention Time for 0.10mm Technology Node and beyond
Author :
J. Lee;C. Cho;J. Lee;S. Shin;J.-W. Lee;K. Kwak;K. Lee;B. Roh;T. Chung;K. Kim
Author_Institution :
Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea (South)
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
571
Lastpage :
574
Keywords :
"Memory architecture","Random access memory","Leakage current","Surface cleaning","Capacitors","Space technology","Etching","Dielectrics","Doping","Capacitance"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194995
Filename :
1503925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619553
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