DocumentCode :
3619554
Title :
Gate Material Properties Induced 0.25um SRAM Marginality
Author :
P. Sallagoity;O. Diop;P. Merenda;M. Juge;F. Oudin;G. Beaulieu;L. Seube;F. Gra
Author_Institution :
STMicroelectronics, Rousset, France
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
575
Lastpage :
578
Keywords :
"Material properties","Random access memory","Resists","Implants","Amorphous silicon","Failure analysis","Surface morphology","Grain size","Mechanical factors","Crystallization"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194996
Filename :
1503926
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619554
