• DocumentCode
    3619558
  • Title

    Annealing Condition Dependence of Electrical Characteristics

  • Author

    J. Taguchi;H. Yamamoto;J. Tonotani;S.-I. Ohmi;H. Iwai

  • Author_Institution
    Tokyo Institute of Technology, Japan
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    591
  • Lastpage
    594
  • Keywords
    "Annealing","Electric variables","Molecular beam epitaxial growth","Temperature","Leakage current","Electron beams","Hafnium","Capacitors","Capacitance-voltage characteristics","Sputtering"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.195000
  • Filename
    1503930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619558