DocumentCode :
3619558
Title :
Annealing Condition Dependence of Electrical Characteristics
Author :
J. Taguchi;H. Yamamoto;J. Tonotani;S.-I. Ohmi;H. Iwai
Author_Institution :
Tokyo Institute of Technology, Japan
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
591
Lastpage :
594
Keywords :
"Annealing","Electric variables","Molecular beam epitaxial growth","Temperature","Leakage current","Electron beams","Hafnium","Capacitors","Capacitance-voltage characteristics","Sputtering"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.195000
Filename :
1503930
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619558
