• DocumentCode
    3619559
  • Title

    Mechanisms of Dopant Redistribution and Retention in Silicon Following Ultra-low Energy Boron Implantation and Excimer Laser Annealing

  • Author

    L. Mariucci;G. Fortunato;S. Whelan;V. Privitera;G. Mannino

  • Author_Institution
    CNR-IFN, Roma, Italy
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    595
  • Lastpage
    598
  • Keywords
    "Silicon","Boron","Annealing"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.195001
  • Filename
    1503931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619559