DocumentCode :
3619560
Title :
Simulation of High-K Tunnel Barriers for Nonvolatile Floating Gate Memories
Author :
M. Specht;M. Stadele;F. Hofmann
Author_Institution :
Infineon Technologies AG, Munich, Germany
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
599
Lastpage :
602
Keywords :
"Nonvolatile memory","High K dielectric materials","High-K gate dielectrics","Tunneling","Nonhomogeneous media","Hot carriers","Threshold voltage","Neodymium","Silicon compounds","Flash memory"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.195002
Filename :
1503932
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619560
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