• DocumentCode
    3619563
  • Title

    Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics

  • Author

    A. Sadovnikov;C. Printy;T. Budri;R. Loo;P. Meunier-Beillard;M. El-Diwany

  • Author_Institution
    National Semiconductor Corp., Santa Clara, CA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    611
  • Lastpage
    614
  • Keywords
    "Boron","Silicon germanium","Germanium silicon alloys","Temperature","Carbon dioxide","Linearity","Tunneling","Radio frequency","Epitaxial growth","Doping profiles"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.195005
  • Filename
    1503935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619563