DocumentCode
3619566
Title
Modeling the C-V Characteristics of Heterodimensional Schottky Contacts
Author
R. Ragi;J. Manzoli;M. Romero;B. Nabet
Author_Institution
University of Sao Paulo, Sao Carlos, Brazil
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
623
Lastpage
626
Keywords
"Capacitance-voltage characteristics","Schottky barriers","Electrons","Gallium arsenide","Thermionic emission","Acoustical engineering","Semiconductor process modeling","Schottky diodes","Poisson equations","Laboratories"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.195008
Filename
1503938
Link To Document