DocumentCode :
3619566
Title :
Modeling the C-V Characteristics of Heterodimensional Schottky Contacts
Author :
R. Ragi;J. Manzoli;M. Romero;B. Nabet
Author_Institution :
University of Sao Paulo, Sao Carlos, Brazil
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
623
Lastpage :
626
Keywords :
"Capacitance-voltage characteristics","Schottky barriers","Electrons","Gallium arsenide","Thermionic emission","Acoustical engineering","Semiconductor process modeling","Schottky diodes","Poisson equations","Laboratories"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.195008
Filename :
1503938
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619566