• DocumentCode
    3619568
  • Title

    Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

  • Author

    V. Gopinath;V. Palankovski;S. Aronowitz;S. Selberherr

  • Author_Institution
    LSI Logic Corporation, Santa Clara, CA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    631
  • Lastpage
    634
  • Keywords
    "Photonic band gap","Stress","Capacitance","Oxidation","Leakage current","Voltage","Isolation technology","Large scale integration","Logic","Microelectronics"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.195010
  • Filename
    1503940