3619568

Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

V. Gopinath;V. Palankovski;S. Aronowitz;S. Selberherr

LSI Logic Corporation, Santa Clara, CA, USA

2002

6/24/1905 12:00:00 AM

631

634

"Photonic band gap","Stress","Capacitance","Oxidation","Leakage current","Voltage","Isolation technology","Large scale integration","Logic","Microelectronics"

ieee

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

88-900847-8-2

conf

10.1109/ESSDERC.2002.195010

1503940