DocumentCode
3619568
Title
Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior
Author
V. Gopinath;V. Palankovski;S. Aronowitz;S. Selberherr
Author_Institution
LSI Logic Corporation, Santa Clara, CA, USA
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
631
Lastpage
634
Keywords
"Photonic band gap","Stress","Capacitance","Oxidation","Leakage current","Voltage","Isolation technology","Large scale integration","Logic","Microelectronics"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.195010
Filename
1503940
Link To Document