Title :
Physics of the Subthreshold Slope - Initial Improvement and Final Degradation in Short CMOS Devices
Author :
R. Gwoziecki;T. Skotnicki
Author_Institution :
LETI, CEA, Grenoble, France
fDate :
6/24/1905 12:00:00 AM
Keywords :
"Physics","Degradation","Doping","Semiconductor device modeling","Poisson equations","Semiconductor process modeling"
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.195012
