Title :
Characterization and simulation of the parasitic BJT in 0.1um partially-depleted SOI devices
Author :
C. Fenouillet-Beranger;O. Faynot;J.d. de Pontcharra;C. Tabone;G. Lecarval;A. Grouillet;J.L. Pelloie;D. Balestra
Author_Institution :
LETI-CEA, Grenoble, France
fDate :
6/23/1905 12:00:00 AM
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195270
