• DocumentCode
    3619651
  • Title

    Stress Induced Leakage Current under EEPROM like Dynamic Stress

  • Author

    S. Croci;J.P. Sorbier;C. Plossu

  • Author_Institution
    LPM-INSA, Villeurbanne, France
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    343
  • Lastpage
    346
  • Keywords
    "Stress","Leakage current","EPROM","Voltage","Dynamic programming","Dielectric substrates","Nonvolatile memory","Character generation","Capacitance-voltage characteristics","Electronic mail"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195271
  • Filename
    1506653
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619651