DocumentCode :
3619651
Title :
Stress Induced Leakage Current under EEPROM like Dynamic Stress
Author :
S. Croci;J.P. Sorbier;C. Plossu
Author_Institution :
LPM-INSA, Villeurbanne, France
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
343
Lastpage :
346
Keywords :
"Stress","Leakage current","EPROM","Voltage","Dynamic programming","Dielectric substrates","Nonvolatile memory","Character generation","Capacitance-voltage characteristics","Electronic mail"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195271
Filename :
1506653
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619651
