3619652

A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket

A.C. Lamb;L.S. Riley;S. Hall;V.D. Kunz;C.H. de Groot;P. Ashburn

University of Liverpool, UK

2001

6/23/1905 12:00:00 AM

347

350

"MOSFET circuits","Dielectrics","Doping","Threshold voltage","Epitaxial layers","Computer science","Computer architecture","Numerical simulation","Epitaxial growth","Logic devices"

ieee

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

2-914601-01-8

conf

10.1109/ESSDERC.2001.195272

1506654