DocumentCode :
3619655
Title :
Relationship of conduction and noise parameters in Low Temperature Poly-Si TFTs
Author :
A. Mercha;L. Pichon;R. Carin;O. Bonnaud
Author_Institution :
GREYC-Instrumentation, France
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
359
Lastpage :
362
Keywords :
"Temperature","Thin film transistors","Crystallization","Low-frequency noise","Electrical resistance measurement","Switches","Grain size","Noise measurement","Electric resistance","Subthreshold current"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195275
Filename :
1506657
Link To Document :
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