DocumentCode
3620304
Title
Offset voltage of Schottky-collector silicon-on-glass vertical PNP´s
Author
G. Lorito;L.K. Nanver;N. Nenadovic
Author_Institution
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fYear
2005
fDate
6/27/1905 12:00:00 AM
Firstpage
22
Lastpage
25
Abstract
Silicon-on-glass vertical PNPs are fabricated and investigated with respect to the influence of the collector design on the offset voltage. With Schottky collector contacts the offset voltage can be made both very low (< 0.1 V) or very high (/spl sim/ 0.3 V).
Keywords
"Voltage","Annealing","Radio frequency","Surface resistance","Silicon","Doping","Schottky diodes","Laboratories","Integrated circuit technology","Radiofrequency integrated circuits"
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555193
Filename
1555193
Link To Document