Title :
Electrothermal stability of bipolar transistors at medium- and high-current operation regimes
Author :
N. Nenadovic;L. La Spina;V. d´Alessandro;L.K. Nanver
Author_Institution :
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fDate :
6/27/1905 12:00:00 AM
Abstract :
Electrothermal behavior of single- and two-finger bipolar transistors at medium and high-current operation is examined thoroughly and described by novel analytical formulations. Combined effects are identified that are responsible for thermally (re)stabilizing Si-and SiGe-base devices.
Keywords :
"Electrothermal effects","Bipolar transistors","Thermal resistance","Voltage","Temperature dependence","Circuit simulation","Feedback","Resistors","Circuit stability","Silicon"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555198
