Low vertical beam divergence double-barrier separate confinement heterostructure (DBSCH) SQW high power laser diodes for /spl lambda/=800 nm range

In this paper, high power LDs based on GaAsP/(AlGa)As heterostructures designed toward reduction of the vertical (perpendicular to junction plane) light beam divergence, intended for /spl lambda/=810 nm are presented. Insertion of thin, wide-gap barrier layers at the interfaces between the waveguide and cladding layers of original SQW SCH enables separate control of the carrier and optical confinements. According to theoretical modelling, the antiguiding influence of the barriers on the waveguiding properties of the original SQW SCH causes a weakening of the optical confinement and enlargement of a light spot on the laser facet. As a consequence both the emitted light vertical beam divergence reduction and the catastrophic optical damage (COD) level increase can be achieved in the DBSCH LDs.