Title :
InGaN-based quantum-well LEDs: explanation of anomalous electro-optical characteristics
Author :
P.G. Eliseev;J. Lee;M. Osinski
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
6/27/1905 12:00:00 AM
Abstract :
Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side.
Keywords :
"Light emitting diodes","Temperature dependence","Quantum well devices","Luminescence","Light sources","Cooling","Electron emission","Semiconductor diodes","Conductivity","Electron optics"
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.201706
