• DocumentCode
    3621313
  • Title

    Layer mode devices on epitaxially grown gan films on Al/sub 2/O/sub 3/

  • Author

    K. Hohkawa;C. Kaneshiro;K. Koh;K. Nishimura;N. Shigekawa

  • Volume
    3
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    1600
  • Lastpage
    1603
  • Keywords
    "Gallium nitride","Bandwidth","Paper technology","Design methodology","Frequency estimation","Transducers","Surface acoustic waves","Telephony","Photonics","Laboratories"
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2005 IEEE
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-9382-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2005.1603167
  • Filename
    1603167