مرکز منطقه ای اطلاع رساني علوم و فناوري - Layer mode devices on epitaxially grown gan films on Al/sub 2/O/sub 3/

DocumentCode :

3621313

Title :

Layer mode devices on epitaxially grown gan films on Al/sub 2/O/sub 3/

Author :

K. Hohkawa;C. Kaneshiro;K. Koh;K. Nishimura;N. Shigekawa

Volume :

fYear :

2005

fDate :

6/27/1905 12:00:00 AM

Firstpage :

1600

Lastpage :

1603

Keywords :

"Gallium nitride","Bandwidth","Paper technology","Design methodology","Frequency estimation","Transducers","Surface acoustic waves","Telephony","Photonics","Laboratories"

Publisher :

ieee

Conference_Titel :

Ultrasonics Symposium, 2005 IEEE

ISSN :

1051-0117

Print_ISBN :

0-7803-9382-1

Type :

conf

DOI :

10.1109/ULTSYM.2005.1603167

Filename :

1603167

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621313