DocumentCode :
3621385
Title :
Transfer effects of induced carriers by SAW
Author :
C. Kaneshiro;K. Koh;K. Hohkawa;K. Nishimura;N. Shigekawa
Volume :
4
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
1896
Lastpage :
1899
Keywords :
"Surface acoustic waves","Gallium nitride","Semiconductor films","Charge transfer","Surface acoustic wave devices","Conductive films","Potential well","Gallium arsenide","Schottky barriers","Optical surface waves"
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2005 IEEE
ISSN :
1051-0117
Print_ISBN :
0-7803-9382-1
Type :
conf
DOI :
10.1109/ULTSYM.2005.1603243
Filename :
1603243
Link To Document :
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