DocumentCode :
3621533
Title :
CMOS devices mobility enhancement and low resistance source/drain
Author :
F. Boeuf; Huiling Shang
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
128
Lastpage :
128
Keywords :
"Ballistic transport","Silicon germanium","Germanium silicon alloys","Contact resistance","Microelectronics","Electrical resistance measurement","Electron mobility","High K dielectric materials","High-K gate dielectrics","Paper technology"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609285
Filename :
1609285
Link To Document :
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