3621549

CMOS devices strained-silicon technology

Yee-Chia Yeo;H.C.-H. Wang

2005

6/27/1905 12:00:00 AM

488

488

"CMOS technology","Silicon germanium","Germanium silicon alloys","Capacitive sensors","Silicon on insulator technology","Uniaxial strain","Optical materials","MOSFETs","Annealing","Buffer layers"

ieee

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

0-7803-9268-X

conf

10.1109/IEDM.2005.1609387

1609387