• DocumentCode
    3621549
  • Title

    CMOS devices strained-silicon technology

  • Author

    Yee-Chia Yeo;H.C.-H. Wang

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    488
  • Lastpage
    488
  • Keywords
    "CMOS technology","Silicon germanium","Germanium silicon alloys","Capacitive sensors","Silicon on insulator technology","Uniaxial strain","Optical materials","MOSFETs","Annealing","Buffer layers"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609387
  • Filename
    1609387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621549