DocumentCode :
3621552
Title :
Quantum, power, and compound semiconductor devices gan high-power devices, pushing the limits
Author :
R. Quay;J. Wuerfl
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
567
Lastpage :
567
Keywords :
"Semiconductor devices","Gallium nitride","Power generation","Solid state circuits","Physics","L-band","Radio frequency","Silicon devices","National electric code","HEMTs"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609409
Filename :
1609409
Link To Document :
بازگشت