DocumentCode :
3621553
Title :
A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency
Author :
R. Therrien;S. Singhal;J.W. Johnson;W. Nagy;R. Borges;A. Chaudhari;A.W. Hanson;A. Edwards;J. Marquart;P. Rajagopal;C. Park;I.C. Kizilyalli;K.J. Linthicum
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
568
Lastpage :
571
Keywords :
"HEMTs","MODFETs","Gallium nitride","Aluminum gallium nitride","Radio frequency","Substrates","Voltage","Impedance matching","Packaging","Conductivity"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609410
Filename :
1609410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621553
