• DocumentCode
    3621553
  • Title

    A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

  • Author

    R. Therrien;S. Singhal;J.W. Johnson;W. Nagy;R. Borges;A. Chaudhari;A.W. Hanson;A. Edwards;J. Marquart;P. Rajagopal;C. Park;I.C. Kizilyalli;K.J. Linthicum

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    568
  • Lastpage
    571
  • Keywords
    "HEMTs","MODFETs","Gallium nitride","Aluminum gallium nitride","Radio frequency","Substrates","Voltage","Impedance matching","Packaging","Conductivity"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609410
  • Filename
    1609410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621553