• DocumentCode
    3621557
  • Title

    Process technology fully-silicided gates

  • Author

    S. Tyagi;S.C. Chen

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    621
  • Lastpage
    621
  • Keywords
    "High K dielectric materials","High-K gate dielectrics","Silicides","Silicon","Impurities","Random access memory","Doping"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609426
  • Filename
    1609426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621557