مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3621557

Title :

Process technology fully-silicided gates

Author :

S. Tyagi;S.C. Chen

fYear :

2005

fDate :

6/27/1905 12:00:00 AM

Firstpage :

621

Lastpage :

621

Keywords :

"High K dielectric materials","High-K gate dielectrics","Silicides","Silicon","Impurities","Random access memory","Doping"

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Print_ISBN :

0-7803-9268-X

Type :

conf

DOI :

10.1109/IEDM.2005.1609426

Filename :

1609426

Link To Document :