• DocumentCode
    3621559
  • Title

    CMOS and interconnect reliability bias-temperature instability and interface traps

  • Author

    B. Kaczer; Ming-Fu Li

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    683
  • Lastpage
    683
  • Keywords
    "Niobium compounds","Titanium compounds","Degradation","Integrated circuit interconnections","Delay effects","Hydrogen","High K dielectric materials","High-K gate dielectrics","Time measurement","Dispersion"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609443
  • Filename
    1609443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621559