3621564

Process technology advanced FEOL technology

K. Suguro;M. Ozturk

2005

6/27/1905 12:00:00 AM

823

823

"MOS devices","MOSFETs","FinFETs","Nitrogen","Leakage current","Gate leakage","Niobium compounds","Titanium compounds","Dielectrics","Transconductance"

ieee

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

0-7803-9268-X

conf

10.1109/IEDM.2005.1609482

1609482