مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3621566

Title :

CMOS devices advanced gate stacks

Author :

R. Lander;K. Kuhn

fYear :

2005

fDate :

6/27/1905 12:00:00 AM

Firstpage :

881

Lastpage :

881

Keywords :

"Hafnium oxide","Silicon germanium","Germanium silicon alloys","MOS devices","Process design","Tin","Electrodes","FinFETs","Threshold voltage","Voltage control"

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Print_ISBN :

0-7803-9268-X

Type :

conf

DOI :

10.1109/IEDM.2005.1609498

Filename :

1609498

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621566