DocumentCode :
3621569
Title :
Modeling and simulation simulation of doping and stress effects in advanced CMOS
Author :
C. Rafferty;J. Lorenz
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
967
Lastpage :
967
Keywords :
"Semiconductor device modeling","Semiconductor process modeling","Doping","Tensile stress","Compressive stress","CMOS technology","Paper technology","FinFETs","Thermal stresses"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609522
Filename :
1609522
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621569
