Title :
Scalling of the exclusion/extraction InSb MOSFETs
Author :
E. Sijercic;B. Pejcinovic
Author_Institution :
Portland State University, Electrical and Computer Engineering Department, Portland OR, USA, sijercic@ece.pdx.edu
fDate :
6/27/1905 12:00:00 AM
Abstract :
A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 mum are analyzed
Keywords :
"MOSFETs","Electrons","Leakage current","Doping","Computational modeling","Computer simulation","Photonic band gap","Frequency","Substrates","Taylor series"
Conference_Titel :
Applied Electromagnetics and Communications, 2005. ICECom 2005. 18th International Conference on
Print_ISBN :
953-6037-44-0
DOI :
10.1109/ICECOM.2005.205048
