• DocumentCode
    3621651
  • Title

    Scalling of the exclusion/extraction InSb MOSFETs

  • Author

    E. Sijercic;B. Pejcinovic

  • Author_Institution
    Portland State University, Electrical and Computer Engineering Department, Portland OR, USA, sijercic@ece.pdx.edu
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for THz active devices operating at very low voltages. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 mum are analyzed
  • Keywords
    "MOSFETs","Electrons","Leakage current","Doping","Computational modeling","Computer simulation","Photonic band gap","Frequency","Substrates","Taylor series"
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetics and Communications, 2005. ICECom 2005. 18th International Conference on
  • Print_ISBN
    953-6037-44-0
  • Type

    conf

  • DOI
    10.1109/ICECOM.2005.205048
  • Filename
    1613555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621651