Title :
Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation
Author :
L. Gelczuk;G. Jozwiak;M. Dabrowska-Szata;D. Radziewicz
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
fDate :
6/27/1905 12:00:00 AM
Abstract :
In this paper, two deep electron traps (E1 or the extended defect and E2 or the point defect) have been detected in partially relaxed InGaAs/GaAs heterostructure by means of deep level transient spectroscopy (DLTS) technique
Keywords :
"Indium gallium arsenide","Gallium arsenide","Epitaxial layers","Electron traps","Optical microscopy","Energy states","Photonic band gap","Electrochemical impedance spectroscopy","Electron beams","Scanning electron microscopy"
Conference_Titel :
Photonics and Microsystems, 2005. Proceedings of 2005 International Students and Young Scientists Workshop
Print_ISBN :
0-7803-9160-8
DOI :
10.1109/STYSW.2005.1617792
