• DocumentCode
    3621707
  • Title

    Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation

  • Author

    L. Gelczuk;G. Jozwiak;M. Dabrowska-Szata;D. Radziewicz

  • Author_Institution
    Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    In this paper, two deep electron traps (E1 or the extended defect and E2 or the point defect) have been detected in partially relaxed InGaAs/GaAs heterostructure by means of deep level transient spectroscopy (DLTS) technique
  • Keywords
    "Indium gallium arsenide","Gallium arsenide","Epitaxial layers","Electron traps","Optical microscopy","Energy states","Photonic band gap","Electrochemical impedance spectroscopy","Electron beams","Scanning electron microscopy"
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Microsystems, 2005. Proceedings of 2005 International Students and Young Scientists Workshop
  • ISSN
    1939-4381
  • Print_ISBN
    0-7803-9160-8
  • Type

    conf

  • DOI
    10.1109/STYSW.2005.1617792
  • Filename
    1617792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621707