Title :
Analysis of avalanche breakdown in PN structures
Author :
S. Amon;D. Krizzaj;S. Sokolic
Author_Institution :
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
fDate :
6/13/1905 12:00:00 AM
Abstract :
The influence of several impact ionization parameters is studied. Reverse breakdown characteristics for different step junction PN structures are calculated. A correspondence of calculated results with standard results found in the literature is reasonable for low and very high doping concentrations, while poor for the 5*10/sup 10/+5*10/sup 19/ cm/sup -3/ region. For this region, corrected values of critical fields leading to proper breakdown voltages are determined and reported.
Keywords :
"Avalanche breakdown","Electric breakdown","Impact ionization","Acceleration","Charge carrier processes","Numerical models","Diodes","Breakdown voltage","Character generation","Analytical models"
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161785
