• DocumentCode
    3621713
  • Title

    Analysis of avalanche breakdown in PN structures

  • Author

    S. Amon;D. Krizzaj;S. Sokolic

  • Author_Institution
    Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
  • fYear
    1991
  • fDate
    6/13/1905 12:00:00 AM
  • Firstpage
    87
  • Abstract
    The influence of several impact ionization parameters is studied. Reverse breakdown characteristics for different step junction PN structures are calculated. A correspondence of calculated results with standard results found in the literature is reasonable for low and very high doping concentrations, while poor for the 5*10/sup 10/+5*10/sup 19/ cm/sup -3/ region. For this region, corrected values of critical fields leading to proper breakdown voltages are determined and reported.
  • Keywords
    "Avalanche breakdown","Electric breakdown","Impact ionization","Acceleration","Charge carrier processes","Numerical models","Diodes","Breakdown voltage","Character generation","Analytical models"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
  • Print_ISBN
    0-87942-655-1
  • Type

    conf

  • DOI
    10.1109/MELCON.1991.161785
  • Filename
    161785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621713