• DocumentCode
    3621716
  • Title

    On the two-dimensional electron gas of HEMT´s

  • Author

    A. Baric

  • Author_Institution
    Fac. of Electr. Eng., Zagreb Univ., Yugoslavia
  • fYear
    1991
  • fDate
    6/13/1905 12:00:00 AM
  • Firstpage
    134
  • Abstract
    An analytical model for the two-dimensional electron gas (2-DEG) concentration that implicitly includes the dependence on acceptor concentration in the GaAs layer of high electron mobility transistors (HEMTs) is developed. The model simplifies the iterative solution of the charge-control model at the gate voltages near the threshold.
  • Keywords
    "Electrons","HEMTs","Semiconductor process modeling","Gallium arsenide","Analytical models","Threshold voltage","Doping","Potential well","Voltage control","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
  • Print_ISBN
    0-87942-655-1
  • Type

    conf

  • DOI
    10.1109/MELCON.1991.161797
  • Filename
    161797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3621716