Title :
On the two-dimensional electron gas of HEMT´s
Author_Institution :
Fac. of Electr. Eng., Zagreb Univ., Yugoslavia
fDate :
6/13/1905 12:00:00 AM
Abstract :
An analytical model for the two-dimensional electron gas (2-DEG) concentration that implicitly includes the dependence on acceptor concentration in the GaAs layer of high electron mobility transistors (HEMTs) is developed. The model simplifies the iterative solution of the charge-control model at the gate voltages near the threshold.
Keywords :
"Electrons","HEMTs","Semiconductor process modeling","Gallium arsenide","Analytical models","Threshold voltage","Doping","Potential well","Voltage control","Fabrication"
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161797
