Title :
Low Frequency Noise of GaAs MESFET Degraded in ESD Test
Author :
M.M. Jevtic;J. Hadzi-Vukovic
Author_Institution :
Inst. of Phys., Belgrade
fDate :
6/28/1905 12:00:00 AM
Abstract :
GaAs MESFET´s were stressed with high voltage pulses of 1 to 3 kV in an ESD experiment. MESFET degradations were studied by I-V and low frequency (LF) noise measurements. We have distinguished two cases: stress in gate and stress in drain. Noise results in the case of gate stress suggest that the LF noise sources are connected with defects near the metal-semiconductor interface
Keywords :
"Low-frequency noise","Gallium arsenide","MESFETs","Degradation","Electrostatic discharge","Testing","Stress","Voltage","Frequency","Noise measurement"
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651020
