Title :
On-membrane Micromechanical Pseudomorphic HFET Microwave Char
Author :
M. Tomaska;M. Klasovity;M. Masar
Author_Institution :
Slovak Univ. of Technol.
fDate :
6/28/1905 12:00:00 AM
Abstract :
This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance
Keywords :
"Micromechanical devices","HEMTs","MODFETs","Frequency estimation","Microwave transistors","Scattering parameters","Frequency measurement","Gallium arsenide","Microwave technology","Signal processing"
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706631
