DocumentCode
3622679
Title
Improvement Of PFC Boost Converter Energy Performance Using Silicon Carbide Diode
Author
M. Janicki;D. Makowski;P. Kedziora;L. Starzak;G. Jablonski;S. Bek
Author_Institution
Lodz Tech. Univ.
fYear
2006
fDate
6/28/1905 12:00:00 AM
Firstpage
615
Lastpage
618
Abstract
This paper discusses the possible benefits of the application of silicon carbide devices in power electronic circuits. The theoretical considerations are illustrated with the measurement results of a 500 W power factor correction (PFC) boost converter. The energy performance of the original converter has been improved owing to the application of silicon carbide Schottky barrier diode (SBD). As expected from the theory, the SiC boost diode allowed the decrease of power losses, thus improving converter efficiency. The ultimate measure of the converter energy performance used by the authors throughout this paper was the product of the energy efficiency and the power factor
Keywords
"Silicon carbide","Schottky diodes","Power measurement","Power electronics","Circuits","Power factor correction","Schottky barriers","Energy measurement","Energy efficiency","Reactive power"
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706656
Filename
1706656
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