Title :
Improvement Of PFC Boost Converter Energy Performance Using Silicon Carbide Diode
Author :
M. Janicki;D. Makowski;P. Kedziora;L. Starzak;G. Jablonski;S. Bek
Author_Institution :
Lodz Tech. Univ.
fDate :
6/28/1905 12:00:00 AM
Abstract :
This paper discusses the possible benefits of the application of silicon carbide devices in power electronic circuits. The theoretical considerations are illustrated with the measurement results of a 500 W power factor correction (PFC) boost converter. The energy performance of the original converter has been improved owing to the application of silicon carbide Schottky barrier diode (SBD). As expected from the theory, the SiC boost diode allowed the decrease of power losses, thus improving converter efficiency. The ultimate measure of the converter energy performance used by the authors throughout this paper was the product of the energy efficiency and the power factor
Keywords :
"Silicon carbide","Schottky diodes","Power measurement","Power electronics","Circuits","Power factor correction","Schottky barriers","Energy measurement","Energy efficiency","Reactive power"
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706656