Lateral distribution of hot-carrier-induced oxide charge and interface traps in MOSFET´s

A new technique to measure the lateral distribution of both interface traps and trapped oxide charge near the drain junction in MOSFET´s is presented. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Measurement results on n-MOSFET´s after hot-carrier stressing are presented. Results are also correlated with device output characteristics.