Title :
IGBT SPICE macro model
Author :
F. Mihalic;M. Milanovic;D. Zadravec;K. Jezernik;E. Reisinger;K. Krischan;R. Filiptsch;M. Rentmeister
Author_Institution :
Fac. of Tech. Sci., Maribor Univ., Smetanova, Slovenia
fDate :
6/14/1905 12:00:00 AM
Abstract :
The complete SPICE macro model of the insulated gate bipolar transistor (IGBT) is described. With a special computer program, the complete macro model of the IGBT for the SPICE simulator has been computed. After the resistive and the dynamic SPICE macro models have been developed and compared with the data sheets, the complete SPICE macro model was simulated and verified with experimental results.
Keywords :
"Insulated gate bipolar transistors","SPICE","MOSFET circuits","Power system modeling","Voltage control","Power semiconductor devices","Power electronics","Computational modeling","Circuit simulation","Power MOSFET"
Conference_Titel :
Industrial Electronics, Control, Instrumentation, and Automation, 1992. Power Electronics and Motion Control., Proceedings of the 1992 International Conference on
Print_ISBN :
0-7803-0582-5
DOI :
10.1109/IECON.1992.254626
