Computer controlled measurement of power MOSFET transient thermal response

A measurement system for the computer controlled power MOSFET transient thermal response is presented. On the basis of a measured semiconductor´s temperature sensitive parameter (TSEP), the transient thermal impedance curve (TTIC) is calculated. Using THERM software and TTIC measured points, an identification of the semiconductor´s thermal model equivalent parameters is provided. A comparison of measured and approximated TTIC shows that the procedure is very exact.