• DocumentCode
    3623282
  • Title

    Anisotropy control in the reactive ion etching of InP using oxygen in methane/hydrogen/argon

  • Author

    J.E. Schramm;D.I. Babic;E.L. Hu;J.E. Bowers;J.L. Merz

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1994
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    This paper contrasts the various uses of oxygen in methane/hydrogen/argon (O/sub 2/:MHA) RIE, in continuous or cyclical processes, for etching deep structures (>5 /spl mu/m). In particular, we show its application to long wave, InGaAsP/InP mirrors for vertical cavity surface emitting laser structures (VCSELs).
  • Keywords
    "Anisotropic magnetoresistance","Indium phosphide","Oxygen","Hydrogen","Argon","Polymers","Vertical cavity surface emitting lasers","Plasma applications","Sputter etching","Mirrors"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328250
  • Filename
    328250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3623282