DocumentCode
3623283
Title
Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP
Author
B. Opitz;A. Kohl;J. Kovac;S. Brittner;F. Grunberg;K. Heime;J. Woitok
Author_Institution
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
fYear
1994
Firstpage
459
Lastpage
462
Abstract
We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.
Keywords
"Photoconductivity","Spectroscopy","Temperature","Epitaxial growth","Epitaxial layers","Voltage","Optical materials","Absorption","Optical superlattices","Capacitive sensors"
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328269
Filename
328269
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