DocumentCode :
3623283
Title :
Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP
Author :
B. Opitz;A. Kohl;J. Kovac;S. Brittner;F. Grunberg;K. Heime;J. Woitok
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
fYear :
1994
Firstpage :
459
Lastpage :
462
Abstract :
We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.
Keywords :
"Photoconductivity","Spectroscopy","Temperature","Epitaxial growth","Epitaxial layers","Voltage","Optical materials","Absorption","Optical superlattices","Capacitive sensors"
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Print_ISBN :
0-7803-1476-X
Type :
conf
DOI :
10.1109/ICIPRM.1994.328269
Filename :
328269
Link To Document :
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