ZnO Branched Nanowires and the p-CuO/n-ZnO Heterojunction Nanostructured Photodetector

Author

Sheng-Bo Wang ; Chih-Hung Hsiao ; Shoou-Jinn Chang ; Jiao, Z.Y. ; Sheng-Joue Young ; Shang-Chao Hung ; Bohr-Ran Huang

Author_Institution

Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

12

Issue

2

fYear

2013

fDate

Mar-13

Firstpage

263

Lastpage

269

Abstract

The authors report the growth of ZnO branched nanowires on the CuO nanowires and the fabrication of p-CuO/n-ZnO heterojunction nanostructured photodetector (PD). It was found that the hydrothermally grown ZnO branched nanowires were reasonably uniform with an average length of 200 nm and an average diameter of 50 nm. Under forward bias, it was found that turn on voltage of the fabricated PD reduced from ~0.7 to ~0.2 V under ultraviolet (UV) illumination. It was also found that UV-to-visible rejection ratio of the fabricated device was larger than 100.

Keywords

II-VI semiconductors; copper compounds; nanofabrication; nanowires; photodetectors; semiconductor growth; semiconductor heterojunctions; ultraviolet detectors; wide band gap semiconductors; zinc compounds; CuO-ZnO; UV-visible rejection ratio; ZnO; forward bias; heterojunction nanostructured photodetector; hydrothermal grown branched nanowires; size 200 nm; size 50 nm; ultraviolet illumination; Current measurement; Fabrication; Lighting; Nanowires; Temperature measurement; Wavelength measurement; Zinc oxide; Branched nanowires; CuO; ZnO; heterojunction; photodetector (PD);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2013.2243916

Filename

6423930