Title :
Properties of InP grown by migration-enhanced epitaxy using polycrystalline InP as phosphorus source
Author :
B.X. Yang;H. Hasegawa
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.
Keywords :
"Indium phosphide","Epitaxial growth","Electrons","X-ray diffraction","Spectroscopy","Molecular beam epitaxial growth","Crystallization","Optical reflection","Photoluminescence","Temperature dependence"
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380658
