Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing
Author :
S. Loh;D. Zhang;R. Liu;C. Li;A. S. Wee
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
173
Lastpage :
176
Keywords :
"Copper","Annealing","MOCVD","Atomic force microscopy","Conducting materials","Plasma temperature","Scanning electron microscopy","Argon","Chemical technology","Chemical vapor deposition"
Publisher :
ieee
Conference_Titel :
Signal Propagation on Interconnects, 6th IEEE Workshop on. Proceedings
