مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3624066

Title :

Phase Change Memory Reliability

Author :

Su Jin Ahn

Author_Institution :

Samsung

fYear :

2006

Firstpage :

216

Lastpage :

216

Keywords :

"Phase change memory","Phase change random access memory","Phase change materials","Degradation","Robustness","Nonvolatile memory"

Publisher :

ieee

Conference_Titel :

Integrated Reliability Workshop Final Report, 2006 IEEE International

ISSN :

1930-8841

Print_ISBN :

1-4244-0296-4

Electronic_ISBN :

2374-8036

Type :

conf

DOI :

10.1109/IRWS.2006.305252

Filename :

4098729

Link To Document :